A 10 V DC source drives current through a 330 Ω resistor in series with two forward-biased silicon diodes. Use the constant-drop model with 0.7 V per conducting diode. Find the current I in mA.
Diodes & transistors worksheet with answers
A 10 V DC source drives current through a 1 kΩ resistor in series with two forward-biased silicon diodes. Use the constant-drop model with 0.7 V per conducting diode. Find the current I in mA.
An NPN transistor with β = 80 has voltage-divider bias from VCC = 18 V: R₁ = 56 kΩ from VCC to the base and R₂ = 22 kΩ from the base to ground. The collector resistor is RC = 2.7 kΩ and the emitter resistor is RE = 1.2 kΩ. Take VBE = 0.7 V and use the Thévenin equivalent of the divider (do not neglect the base current). Find the collector–emitter voltage VCE.
An NPN transistor with β = 120 has voltage-divider bias from VCC = 20 V: R₁ = 22 kΩ from VCC to the base and R₂ = 4.7 kΩ from the base to ground. The collector resistor is RC = 4.7 kΩ and the emitter resistor is RE = 1 kΩ. Take VBE = 0.7 V and use the Thévenin equivalent of the divider (do not neglect the base current). Find the collector–emitter voltage VCE.
An NPN transistor with β = 100 switches a 1 kΩ load resistor connected between VCC = 9 V and its collector. The emitter is grounded. The base is driven from a 5 V logic output through a base resistor RB = 10 kΩ. Take VBE = 0.7 V and VCE(sat) = 0.2 V. Find the collector current IC in mA when the input is high. Decide first whether the transistor is saturated.
An NPN transistor with β = 50 switches a 150 Ω load resistor connected between VCC = 5 V and its collector. The emitter is grounded. The base is driven from a 3.3 V logic output through a base resistor RB. Take VBE = 0.7 V and VCE(sat) = 0.2 V. For reliable switching, design for a base current 4 times the minimum needed for saturation. Find RB in kΩ.
Answer key
- 1. I = 26.06 mA
- 2. I = 8.6 mA
- 3. VCE = 5.868 V
- 4. VCE = 4.527 V
- 5. IC = 8.8 mA
- 6. RB = 1.016 kΩ
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