A 10 V DC source is connected through resistor R₁ = 330 Ω to a node X. From node X to the source’s negative terminal there are two parallel paths: resistor R₂ = 1.5 kΩ, and a silicon diode with its anode at X. Use the constant-drop model with 0.7 V. Find the diode current ID in mA.
Diodes & transistors worksheet with answers
A 10 V DC source is connected through resistor R₁ = 470 Ω to a node X. From node X to the source’s negative terminal there are two parallel paths: resistor R₂ = 1 kΩ, and a silicon diode with its anode at X. Use the constant-drop model with 0.7 V. Find the diode current ID in mA.
An NPN transistor with β = 100 has voltage-divider bias from VCC = 15 V: R₁ = 56 kΩ from VCC to the base and R₂ = 15 kΩ from the base to ground. The collector resistor is RC = 1.5 kΩ and the emitter resistor is RE = 1 kΩ. Take VBE = 0.7 V and use the Thévenin equivalent of the divider (do not neglect the base current). Find the collector–emitter voltage VCE.
An NPN transistor with β = 150 has voltage-divider bias from VCC = 20 V: R₁ = 68 kΩ from VCC to the base and R₂ = 10 kΩ from the base to ground. The collector resistor is RC = 2.7 kΩ and the emitter resistor is RE = 1.2 kΩ. Take VBE = 0.7 V and use the Thévenin equivalent of the divider (do not neglect the base current). Find the collector–emitter voltage VCE.
An NPN transistor with β = 100 switches a 1 kΩ load resistor connected between VCC = 9 V and its collector. The emitter is grounded. The base is driven from a 3.3 V logic output through a base resistor RB. Take VBE = 0.7 V and VCE(sat) = 0.2 V. Find the largest base resistor RB, in kΩ, that still drives the transistor just into saturation.
An NPN transistor with β = 80 switches a 220 Ω load resistor connected between VCC = 5 V and its collector. The emitter is grounded. The base is driven from a 5 V logic output through a base resistor RB. Take VBE = 0.7 V and VCE(sat) = 0.2 V. Find the largest base resistor RB, in kΩ, that still drives the transistor just into saturation.
Answer key
- 1. ID = 27.72 mA
- 2. ID = 19.09 mA
- 3. VCE = 9.508 V
- 4. VCE = 14.25 V
- 5. RB = 29.55 kΩ
- 6. RB = 15.77 kΩ
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